Description
Product Model:IC660ELB912G
Brand:GE
Type:MicroGENI Daughterboard
Communication Rate:[“38.4K”,”76.8K”,”153.6K standard”,”153.6K extended baud rates”]
Power Requirement:5 Volts DC, 400 milliamps
Supported Devices:30 per daughtercard
Operating Voltage:220 (V)
Output Frequency:N/A
Certification:Certified by GE
The GE IC660ELB912G MicroGENI daughterboard is a high-performance component designed for integration into Genius I/O systems, providing seamless communication capabilities in industrial environments.
This daughterboard supports up to 30 devices per daughtercard, ensuring scalability and flexibility for various control applications.
With a power requirement of 5 volts DC at 400 milliamps, the IC660ELB912G ensures reliable operation even under demanding conditions.
The communication rate can be set to 38.4K, 76.8K, 153.6K standard, or 153.6K extended baud rates, allowing for tailored performance to meet specific project requirements.
Built with precision engineering, the IC660ELB912G MicroGENI daughterboard offers durability and longevity, making it an ideal choice for critical industrial automation projects.
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