ABB IGCT 5SHY35L4520 thyristor high voltage frequency conversion control board

Description

ABB IGCT 5SHY35L4520 thyristor high voltage frequency conversion control board

Power semiconductor devices, also known as power electronic devices, can be combined with different circuit topologies to form various types of power electronic devices to achieve rectification, inverter, frequency conversion, voltage regulation and other functions. With the continuous innovation of power semiconductor technology, from high-voltage power transmission to urban electricity, from industrial frequency conversion to medical devices, from the motor drive of electric vehicles to household appliances such as air conditioners and refrigerators, and then to mobile phones, notebooks and other digital products, power semiconductor devices are everywhere, and are inseparable from our lives. Among them, Integrated Gate Commutated Thyristor (IGCT) devices, as a young member of the power semiconductor device family, were first proposed in 1997, showing great development potential, and are becoming the “core” choice of DC power grid

In the 1980s, high-speed, fully controlled devices represented by IGBT developed rapidly. IGBT combines the advantages of metal oxide semiconductor field effect transistor (MOSFET) with low drive power, fast switching speed, and bipolar transistor (BJT) with low on-state voltage and high current carrying capacity. With the continuous upgrading of IGBT, it has become the mainstream device of modern power electronics technology, especially the emergence of crimped IGBT, so that it has taken a big step to high power and high efficiency, and has been widely used in flexible direct current transmission (VSC-HVDC) engineering. At the same time, through the improvement of GTO technology, a new generation of turn-off thyristor device IGCT was introduced in the 1990s. IGCT improves the GTO chip and tightly integrates the driver circuit and chip in a new low-sensing package, showing more significant advantages than traditional GTO: low loss, fast switching speed, high capacity density, and high reliability. These advantages ensure that IGCT can be used safely, reliably, economically and efficiently in the field of high-voltage large-capacity power conversion on the basis of maintaining a low cost, and has more prominent advantages in some power electronic devices.