Description
5SHY3545L0009 ABB high voltage variable frequency IGCT module
IGCT integrated gate converter thyristor (IntergratedGateCommutatedThyristors), it is the decision with the parallel diode chip and gate drive circuit integration in together, with the gate driver in peripheral low inductance mode connection. This is the GTO (Gate Turn Off).
IGCT is in the same vein as SCR in the rectification process, SCR is the abbreviation of Silicon Controlled Rectifier. Thyristors have one-way, two-way, turn-off and light control several types. It has the advantages of small size, light weight, high efficiency, long life, easy control, etc., and is widely used in various automatic control and high-power electric energy conversion occasions such as controlled rectification, voltage regulation, inverter and contactless switch.
Unidirectional thyristor is a controlled rectifier electronic component that can be turned off by an external control signal, but once it is turned on, the external signal cannot be turned off, and it can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional thyristor is a four-layer, three-terminal semiconductor device composed of three PN junction PNPN. Compared with the diode with one PN junction, unidirectional thyristor is controlled by the control electrode current. Compared with a triode with two PN junctions, the difference is that the thyristor has no amplification effect on the control electrode current. Bidirectional thyristor has the characteristics of turning on and off in two directions. Bidirectional thyristor is essentially two anti-parallel unidirectional thyristor, which is a semiconductor device composed of four PN structures formed by NPNPN five layers of semiconductors and has three electrodes. Because the structure of the main electrode is symmetrical (all from the N layer), its electrodes are not called anode and cathode as one-way thyristor, but the first electrode A1 that is very close to the control is called the second electrode A2. The main disadvantage of bidirectional thyristors is the low ability to withstand the voltage rise rate. This is because when the bidirectional thyristor is switched on in one direction, the carriers in each layer of the silicon wafer have not returned to the position of the cutoff state, and corresponding protection measures must be taken. Bidirectional thyristor components are mainly used in AC control circuits, such as temperature control, light control, explosion-proof AC switches and DC motor speed regulation and commutation circuits. The thyristor is always in the open state above the maintenance current, the turn-off current is high, the control is difficult, and the turn-off speed is slow. In the inverter link, SCR has excellent performance in LCI (load commutated inverter), which can achieve large power, high voltage and large current. Diode (uncontrolled rectifier device) and SCR (semi-controllable) rectifier do not require PMW to meet the two-quadrant inverter work, PWM requires IGBT (full control) and other devices.
5shx2614510 |
5shx14h4502 |
5SHY4045L0006 |
5SHY3545L0010 |
5SHX2645L0002 |
5SHY4045L0004 |
PFTL101A-2.0KN 3BSE004172R1 |
PM864AK01 3BSE018161R1 |
SCC-C(23070-010132110) |
DSMB-01C |
GOP2 |
PP885 3BSE069276R1 |
DSDP140B |
DSDP140A |
3HNA025019-001 |
PFTL101A 0.5KN |
KUC711AE 3BHB004661R0001 |
UFC721BE101 3BHE021889R0101 |
PPC380AE01 HIEE300885R0001 |
UFC719AE01 3BHB003041R0001 3BHB000272R0001 |
KUC720AE01 3BHB003431R0001 3BHB000652R0001 |
KUC711AE 3BHB004661R0001 |
5SHY3545L0016 3BHB019719R0101 GVC736BE101 5SXE06-0160 |
KUC711AE101 3BHB004661R0101 |
PFTL101B 5.0KN 3BSE004191R1 |
PFTL101A 1.0KN 3BSE004166R1 |
5SHX1445H0002 3BHL000387P0101 |
5SHY3545L0010/3BHB013088R0001 |
5SHX2645L0002/3HB012961R0001 |
AI815 |
AI820 |
AI830 |
AI830A |
AI835 |
AI835A |
AI845 |
AO810 |
AO810V2 |
AO815 |
AO820 |
AO845 |
AO845A |
DI810 |
DI811 |
DI814 |
DI830 |
DI831 |
DI840 |
1851 |
DO880 |
DO8140 |
DO840 |
DO880 |
DP820 |
DP840 |
APPLIED 0090-00224(0130-00372) |
PFTL101B 20KN 3BSE004203R1 |
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