ABB IGCT 5SHY35L4520 thyristor high voltage frequency conversion control board

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  • Quality: Original module
  • Condition: New / Used
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Description

ABB IGCT 5SHY35L4520 thyristor high voltage frequency conversion control board

Power semiconductor devices, also known as power electronic devices, can be combined with different circuit topologies to form various types of power electronic devices to achieve rectification, inverter, frequency conversion, voltage regulation and other functions. With the continuous innovation of power semiconductor technology, from high-voltage power transmission to urban electricity, from industrial frequency conversion to medical devices, from the motor drive of electric vehicles to household appliances such as air conditioners and refrigerators, and then to mobile phones, notebooks and other digital products, power semiconductor devices are everywhere, and are inseparable from our lives. Among them, Integrated Gate Commutated Thyristor (IGCT) devices, as a young member of the power semiconductor device family, were first proposed in 1997, showing great development potential, and are becoming the “core” choice of DC power grid

In the 1980s, high-speed, fully controlled devices represented by IGBT developed rapidly. IGBT combines the advantages of metal oxide semiconductor field effect transistor (MOSFET) with low drive power, fast switching speed, and bipolar transistor (BJT) with low on-state voltage and high current carrying capacity. With the continuous upgrading of IGBT, it has become the mainstream device of modern power electronics technology, especially the emergence of crimped IGBT, so that it has taken a big step to high power and high efficiency, and has been widely used in flexible direct current transmission (VSC-HVDC) engineering. At the same time, through the improvement of GTO technology, a new generation of turn-off thyristor device IGCT was introduced in the 1990s. IGCT improves the GTO chip and tightly integrates the driver circuit and chip in a new low-sensing package, showing more significant advantages than traditional GTO: low loss, fast switching speed, high capacity density, and high reliability. These advantages ensure that IGCT can be used safely, reliably, economically and efficiently in the field of high-voltage large-capacity power conversion on the basis of maintaining a low cost, and has more prominent advantages in some power electronic devices.

PFEA111-20    3BSE028140R20
PFEA112-20    3BSE030369R20
PFEA113-20    3BSE028144R20
PFEA111-65    3BSE028140R65
PFEA112-65    3BSE030369R65
PFEA113-65    3BSE028144R65
PFSA103C 3BSE002488R1
PFXC141 3BSE029997R1
PFVO142 3BSE023732R1
PFSA145APPR.3KVA3BSE008843R1
PFTL201C-50KN
PFCL201CE-50KN
PFCL201CD 20KN
PFTL101B-5.0kN, 3BSE004191R1
PFTL101B-10.0kN,   3BSE004197R1
PFTL101B-20.0kN,   3BSE004203R1
PFTL101AE-0.5kN,   3BSE004211R1
PFTL101AE-2.0kN,   3BSE004213R1
PFTL101A-0.5kN, 3BSE004160R1
PFTL101A-1.0kN,3BSE004166R1
PFTL101B-2.0kN, 3BSE004185R1
PFTL101A-2.0kN,3BSE004172R1
PFCA401F 3BSE024387R3
PFCA401S 3BSE024387R2
PFXA401S  3BSE024388R2
PFXA401F    3BSE024388R3
PFXA401SF  3BSE024388R4
PFXA401   3BSE024388R1
PFXA4013BSE024388R1
PFXA401F 3BSE024388R3
3BSE024388R4
 3BSE024388R2
 3BSE024388R3
PFSA103B,STU 48 3BSE002487R1
PFSA103C,STU 42 3BSE002488R1
PFSA140  3BSE006503R1
PFSA103E,STU 16 3BSE016268R1
PFSA103D,STU 32 3BSE002489R1
PFSA147A 3BSE008884R1
PFSA145 3BSE008843R1
5SHX2645L0004
3BHL000389P0104
3BHB003154R0101
5SXE04-0150
GVC707AE01
5SXE04-0150/GVC707AE01
DI801
DO801
FAN D2D160-CE02-11
ACS355-03E-02A4-4
DSSR122 4899001-NK
5SHY5045L0020
5SHY3545L0016
5SHY3545L0014
5SHY4045L0004
5shy3545L0003
5shy3545L0002
5shy3545L0001
5SHY3545L0010
5SHY3545L0009
5shy4045L0006
5shy3545L0016
5shy35L4510
5shy35L4520
5shy3545L0010
5shy3545L0009
5shy4045L0004
5shy4045L0001
5shx2645L0002
5shx2645L0006
5shx1445H0002
5shx0660F0001
5shx0660F0002
5SHX1060H0003
5shx196L0004
5shx2645L0004
5shx1445h0001
5SHX1445H0002

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